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| BSM 10 GD 60 DN2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type BSM 10 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V VCE 600V IC 10A Package ECONOPACK 1 Ordering Code C67076-A2508-A67 VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 10 TC = 40 C Pulsed collector current, tp = 1 ms ICpuls 20 TC = 40 C Power dissipation per IGBT Ptot 35 W + 125 -55 ... + 150 3.5 4.5 2500 12 10 F 40 / 125 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jan-09-1997 BSM 10 GD 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 C VGE = 15 V, IC = 10 A, Tj = 125 C Zero gate voltage collector current ICES 1 mA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 3 570 80 50 - S pF - VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jan-09-1997 BSM 10 GD 60 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 40 80 ns VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Rise time tr nS VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Turn-off delay time td(off) 250 370 ns VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Fall time tf nS VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Free-Wheel Diode Diode forward voltage VF 1.6 1.4 - V IF = 10 A, VGE = 0 V, Tj = 25 C IF = 10 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.1 - s IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/s Tj = 25 C Tj = 125 C 0.25 0.5 - Semiconductor Group 3 Jan-09-1997 BSM 10 GD 60 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 36 W Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 A tp = 18.0s Ptot 28 24 20 16 12 IC 10 1 100 s 10 0 1 ms 10 -1 8 DC 4 0 0 10 -2 0 10 10 ms 20 40 60 80 100 C 130 10 1 10 2 V 10 3 TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 12 A 10 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT K/W IC 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 C 160 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -2 0.05 single pulse 0.02 0.01 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Jan-09-1997 BSM 10 GD 60 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 20 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 20 A 17V 15V 13V 11V 9V 7V IC 16 14 12 10 8 6 4 2 0 0 IC 16 14 12 10 8 6 4 2 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 20 A IC 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jan-09-1997 BSM 10 GD 60 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 10 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 -1 6 4 2 0 0 10 -2 0 Coss Crss 10 20 30 40 nC 55 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 100 200 300 400 500 600 V 800 VCE 0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 6 Jan-09-1997 BSM 10 GD 60 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 100 10 3 tf t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 10 A 10 3 tdoff tf t ns tdoff t ns tr 10 2 tr 10 2 tdon tdon 10 1 0 5 10 15 A 25 10 1 0 50 100 150 200 250 300 IC 400 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 100 2.0 mWs E 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 A 25 E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 10 A 2.0 mWs E Eoff Eon 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 50 100 150 200 250 300 Eoff Eon IC 400 RG Semiconductor Group 7 Jan-09-1997 BSM 10 GD 60 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 20 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 16 14 12 10 8 6 4 2 0 0.0 ZthJC 10 0 Tj=125C Tj=25C 10 -1 D = 0.50 0.20 single pulse 10 -2 0.10 0.05 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jan-09-1997 BSM 10 GD 60 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 60 g Semiconductor Group 9 Jan-09-1997 |
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